Texas Instruments Incorporated (TI) is looking to develop and optimize high voltage gallium nitride (GaN) and silicon power devices, and is seeking a Device Engineer to join their Advanced Technology Development (ATD) team to collaborate with fab/manufacturing, business units and Kilby Labs.
Requirements
- HEMTs/FETs and other relevant semiconductor device physics
- Typical analog silicon and GaN High Electron Mobility Transistor (HEMT) process flows and the underlying process physics
- Electrical and materials characterization methodologies and statistical data analysis
Responsibilities
- Device simulations (TCAD), device design, layout
- Fabrication, flow evaluation and characterization of devices
- Collaboration with fab/manufacturing engineers to ensure device manufacturability
- Collaboration with reliability engineers to meet device reliability requirements
- Failure root-cause investigation for device/process/reliability/yield improvements
Other
- Masters in Electrical Engineering, Electrical and Computer Engineering, Materials Engineering, Physics or related
- Cumulative GPA 3.0/4.0
- Strong verbal and written communication skills
- Ability to work in teams and collaborate effectively with people in different functions
- Ability to take the initiative and drive for results
