MACOM is looking for an RF Power Amplifier Design Intern to assist with the design of high power GaN transistor products for Multi Market, Base Station and 5G markets. The intern will gain hands-on experience in RF device handling, biasing, data capturing, EM simulation, impedance matching network design, circuit layout, assembly, soldering, tuning, and performance comparison between simulation and measurement.
Requirements
- Understanding of Linear Circuit Theory
- Understanding of Transmission-line Theory
- Impedance Matching/Transform, Smith Chart
- RF design software including ADS, MWO
- 2.5D or 3D EM simulation
- RF passive/active circuit design
- Doherty Power Amplifier
Responsibilities
- RF power device design of MACOM’s high power GaN transistor products
- handling RF devices
- biasing devices
- capturing accurate RF data
- EM simulation
- design an impedance matching network for an amplifier, using either MWO or ADS design software
- layout the impedance matching network in AutoCAD
Other
- Working toward a Bachelor’s or Master’s degree in Electrical Engineering.
- Strong interest in RF/microwave and semiconductor devices; relevant coursework and/or lab work a must
- Willing to work hands-on in the lab to test RF devices and assemble and test RF amplifiers
- Attention to detail and strong documentation skills
- Gain hands on experience
